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| SavantIC Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION *With TO-66 package *DARLINGTON *Low collector saturation voltage *Complement to type 2N6298/6299 APPLICATIONS *General purpose power amplifier and low frequency switching applications PINNING (See Fig.2) PIN 1 2 3 Base Emitter Collector DESCRIPTION 2N6300 2N6301 Fig.1 simplified outline (TO-66) and symbol Absolute maximum ratings(Ta=25 ) SYMBOL VCBO PARAMETER Collector-base voltage 2N6300 2N6301 Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Total power dissipation Junction temperature Storage temperature TC=25 2N6300 2N6301 Open collector Open base Open emitter CONDITIONS VALUE 60 80 60 80 5 8 16 0.12 75 200 -65~200 V A A A W V UNIT V VCEO VEBO IC ICM IB PT Tj Tstg THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance from junction to case MAX 2.33 UNIT /W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER 2N6300 IC=0.1A ; IB=0 2N6301 IC=4A; IB=16mA IC=8A; IB=80mA IC=8A; IB=80mA IC=4A ; VCE=3V 2N6300 ICEX Collector cut-off current 2N6301 2N6300 ICEO Collector cut-off current 2N6301 IEBO hFE-1 hFE-2 COB Emitter cut-off current DC current gain DC current gain Output capacitance VCE=40V; IB=0 VEB=5V; IC=0 IC=4A ; VCE=3V IC=8A ; VCE=3V IE=0 ; VCB=10V;f=0.1MHz VCE=60V; VBE(off)=1.5V TC=150 VCE=80V; VBE(off)=1.5V TC=150 VCE=30V; IB=0 CONDITIONS 2N6300 2N6301 SYMBOL MIN 60 TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage V 80 2.0 3.0 4.0 2.8 0.5 5.0 0.5 5.0 V V V V VCEsat-1 VCEsat-2 VBEsat VBE Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Base -emitter on voltage mA 0.5 mA 2.0 750 100 200 18000 mA pF 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2N6300 2N6301 Fig.2 Outline dimensions 3 |
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